MRF448 Datasheet, PDF (1/6 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed primarily for high–voltage applications as a high–power linear
amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
• Specified 50 Volt, 30 MHz Characteristics
Output Power = 250 W
Minimum Gain = 12 dB
Efficiency = 45%
• Intermodulation Distortion @ 250 W (PEP) —
IMD = – 30 dB (Max)
• 100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR
Order this document
by MRF448/D
MRF448
250 W, 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 211–11, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Withstand Current — 10 s
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
—
PD
Tstg
Symbol
R_θJC
Value
50
100
4.0
16
20
290
1.67
– 65 to +150
Max
0.6
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0)
V(BR)CEO
50
—
—
Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0)
V(BR)CES
100
—
—
Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0)
V(BR)CBO
100
—
—
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
NOTE:
1. PD is a measurement reflecting short term maximum condition. See SOAR curve for operating conditions.
Unit
Vdc
Vdc
Vdc
Vdc
(continued)
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF448
1