MRF4427 Datasheet, PDF (2/6 Pages) Motorola, Inc – HIGH-FREQUENCY TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 360 mAdc, VCE = 5.0 Vdc)
hFE
10
5.0
Collector–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mAdc)
VCE(sat)
—
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz)
fT
—
Output Capacitance
(VCB = 12 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(Pin = 15 mW, VCC = 12 Vdc, f = 175 MHz)
Gpe
—
Collector Efficiency (Figure 1)
(Pout = 1.0 W, VCC = 12 Vdc, f = 175 MHz)
Insertion Gain
(VCE = 12 Vdc, IC = 50 mA, f = 200 MHz)
η
—
|S21|2
14
Typ
50
—
60
1600
—
18
60
16.4
Max
Unit
—
200
—
—
mVdc
—
MHz
3.0
pF
—
dB
—
%
—
dB
D.U.T.
C1
L1
C2
RFC1
C3
L2
C4
C5
RFC2
C8
C9
C6
C7
RFC3
C10 C11
C12
C13
RFC4
C15
C14
C16+
D1
R1
R2
VCC
C1, C2 — 5.5 – 18 pF Erie ceramic trimmer
C3 — 1000 pF ATC 100 mil chip cap.
C4 — 9.0 – 35 pF Erie ceramic trimmer
C5 — Arco 405 mica trimmer
C6, C8, C10, C14 — 0.1 µF Erie blue cap.
C7, C9 — 470 pF ATC 100 mil chip cap.
C11, C13, C15 — 1.0 µF Erie blue cap, non–polar
C12 — 1000 pF feedthru
C16 — 10 µF, 25 V tantalum
D1 — 1N4148 or 1N914
L1 — 6T #20 AWG on #2 drill bit
L2 — 4T #20 AWG on #4 drill bit
R1 — 4.7 kΩ 1/8 watt carbon
R2 — 100 Ω 1/8 watt carbon
RFC1 – 4 — 10 µH molded choke
Figure 1. 175 MHz RF Amplifier Circuit for Functional Tests
MRF4427R2
2
MOTOROLA RF DEVICE DATA