MRF4427 Datasheet, PDF (1/6 Pages) Motorola, Inc – HIGH-FREQUENCY TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Low Power Transistor
Designed for amplifier, frequency multiplier, or oscillator applications in
industrial equipment constructed with surface mount components. Suitable for
use as output driver or pre–driver stages in VHF and UHF equipment.
• Low Cost SORF Plastic Surface Mount Package
• Guaranteed RF Specification — |S21|2
• S–Parameter Characterization
• Low Voltage Version of MRF3866
• Tape and Reel Packaging Available.
R2 suffix = 2,500 units per reel
Order this document
by MRF4427/D
MRF4427R2
1.0 W, 175 MHz
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 75°C
Derate above 75°C
VCEO
VCBO
VEBO
IC
PD
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
TJ, Tstg
Symbol
Thermal Resistance, Junction to Case
DEVICE MARKING
MRF4427 = 4427
R_θJC
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 5.0 mAdc, IB = 0)
V(BR)CEO
20
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, RBE = 10 ohms)
V(BR)CER
40
Emitter–Base Breakdown Voltage (IE = 100 µAdc)
V(BR)EBO
2.0
Collector Cutoff Current (VCE = 12 Vdc, IB = 0)
ICEO
—
NOTE:
1.Case temperature measured on collector lead immediately adjacent to body of package.
REV 8
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
CASE 751–05, STYLE 1
SORF
(SO–8)
Value
20
40
2.0
400
1.67
22.2
– 65 to +150
Max
45
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
°C
Unit
°C/W
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
20
µAdc
(continued)
MRF4427R2
1