MRF3866 Datasheet, PDF (2/4 Pages) Motorola, Inc – HIGH-FREQUENCY TRANSISTORS NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 360 mAdc, VCE = 5.0 Vdc) (1)
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE
—
5.0
—
10
200
Collector–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mAdc)
VCE(sat)
—
1.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz)
fT
500
—
MHz
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
3.0
pF
FUNCTIONAL TEST
Amplifier Power Gain
(VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz)
Gpe
10
—
dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz)
NOTE:
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
η
45
—
%
VCE
(Volts)
15
IC
(mA)
50
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
S11
S11
∠φ
0.67
– 166
0.69
– 176
0.70
177
0.71
172
0.72
168
0.72
164
0.72
160
0.72
155
0.71
151
0.70
146
S21
S21
∠φ
13.75
92
6.93
81
4.57
73
3.38
67
2.66
61
2.17
54
1.85
49
1.61
44
1.40
39
1.25
34
S12
S12
∠φ
0.016
44
0.024
53
0.032
57
0.042
59
0.049
59
0.056
61
0.061
63
0.068
65
0.075
64
0.084
68
Table 1. MRF3866R2 Common Emitter S–Parameters
S22
S22
∠φ
0.32
– 27
0.30
– 24
0.32
– 31
0.34
– 37
0.37
– 45
0.40
– 53
0.43
– 60
0.47
– 66
0.50
– 73
0.53
– 79
MRF3866R2
2
MOTOROLA RF DEVICE DATA