MRF3866 Datasheet, PDF (1/4 Pages) Motorola, Inc – HIGH-FREQUENCY TRANSISTORS NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF3866/D
The RF Line
NPN Silicon
High-Frequency Transistor
• Tape and reel packaging available for MRF3866R2:
R2 suffix = 2,500 units per reel
MRF3866R2
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
Maximum Junction Temperature
TJmax
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Value
30
55
3.5
0.4
625
5.0
1.5
12
– 55 to +150
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/°C
Watts
mW/°C
°C
150
°C
Symbol
R_θJC
R_θJA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, RBE = 10 Ω)
Collector–Emitter Sustaining Voltage
(IC = 5.0 mAdc, IB = 0)
Emitter–Base Breakdown Voltage
(IE = 100 µAdc, IC = 0)
Collector Cutoff Current
(VCE = 28 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 30 Vdc, VBE = –1.5 Vdc (Rev.), TC = 150°C)
(VCE = 55 Vdc, VBE = –1.5 Vdc (Rev.)
Emitter Cutoff Current
(VBE = 3.5 Vdc, IC = 0)
Symbol
V(BR)CER
VCEO(sus)
V(BR)EBO
ICEO
ICEX
IEBO
IC = 400 mA
HIGH–FREQUENCY
TRANSISTORS
NPN SILICON
CASE 751–05, STYLE 1
(SO–8)
Max
Unit
83.3
°C/W
125
°C/W
Min
Max
Unit
55
—
Vdc
30
—
Vdc
3.5
—
Vdc
—
0.02
mAdc
mAdc
—
5.0
—
0.1
—
0.1
mAdc
(continued)
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
(Replaces MPS3866/D)
MRF3866R2
1