MRF338 Datasheet, PDF (2/6 Pages) Motorola, Inc – BROADBAND RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Breakdown Voltage
(IC = 80 mAdc, IE = 0)
V(BR)CBO
60
—
—
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
—
—
5
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 4 Adc, VCE = 5 Vdc)
hFE
20
—
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1 MHz)
Cob
—
95
125
pF
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, Pout = 80 W, f = 470 MHz)
GPE
7.3
8.8
—
dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 80 W, f = 470 MHz)
η
50
60
—
%
Load Mismatch
(VCC = 28 Vdc, Pout = 80 W, f = 470 MHz,
VSWR = 30:1, All Phase Angles at Frequency of Test)
ψ
No Degradation in Output Power
RF
INPUT
C11
R1
Z1
L3
L2
DUT
L1
C1
BEAD
C5
C2 C3 C4
RFC1
C14
C12
C13
R2
L4
+
C15
–
C10
Z2
Z3
Z4
C6 C7
C8
C9
VCC
+
28 V
RF
OUTPUT
Bead
C1, C2, C8, C9
C3, C4, C6, C7
C5, C10
C11, C13
C12, C14
C15
L1
L2
Ferroxcube #56–590–65/3B
0.8 – 20 pF, Johanson (JMC 5501)
25 pF, 100 V, Underwood
100 pF, 100 V, Underwood
0.1 µF, Erie Redcap
680 pF, Feedthru
1.0 µF, Tantalum
0.15 µH, Molded Choke
5 Turns #20 AWG, 0.185″ ID, Close Wound
L3
L4
RFC1
R1, R2
Z1
Z2
Z3
Z4
Board
3 Turns #18 AWG, 0.185″ ID, Close Wound
4 Turns #18 AWG, 0.185″ ID, Close Wound
Ferroxcube VK200 19/4B
10 Ω, 2.0 Watt Carbon
0.190″ W x 2.5″ L, Microstrip Lin
0.190″ W x 0.289″ L, Microstrip Line
0.190″ W x 0.55″ L, Microstrip Line
0.190″ W x 0.325″ L, Microstrip Line
Glass Teflon, t = 0.062″, ε_r = 2.56
Figure 1. 470 MHz Test Circuit
MRF338
2
MOTOROLA RF DEVICE DATA