MRF338 Datasheet, PDF (1/6 Pages) Motorola, Inc – BROADBAND RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon RF Power Transistor
Designed primarily for wideband large–signal output and driver amplifier
stages in the 400 to 512 MHz frequency range.
• Specified 28 Volt, 470 MHz Characteristics
Output Power = 80 Watts
Minimum Gain = 7.3 dB
Efficiency = 50% (Min)
• Built–In Matching Network for Broadband Operation
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Gold Metallization System for High Reliability Applications
Order this document
by MRF338/D
MRF338
80 W, 400 to 512 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 333–04, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current — Peak
VCEO
30
Vdc
VCBO
60
Vdc
VEBO
4
Vdc
IC
9
Adc
12
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
PD
250
Watts
1.43
W/°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Tstg
– 65 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (2)
R_θJC
0.7
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 80 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 80 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 8 mAdc, IC = 0)
V(BR)CEO
30
—
—
Vdc
V(BR)CES
60
—
—
Vdc
V(BR)EBO
4
—
—
Vdc
(1) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
(2) Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 2
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF338
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