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MRF326 Datasheet, PDF (2/6 Pages) Motorola, Inc – BROADBAND RF POWER TRANSISTOR NPN SILICON | |||
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ELECTRICAL CHARACTERISTICS â continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS (Figure 1)
CommonâEmitter Amplifier Power Gain
(VCC = 28 Vdc, Pout = 40 W, f = 400 MHz, IC Max = 2.85 Adc)
Collector Efficiency
(VCC = 28 Vdc, Pout = 40 W, f = 400 MHz, IC Max = 2.85 Adc)
Load Mismatch
(VCC = 28 Vdc, Pout = 40 W CW, f = 400 MHz,
VSWR = 30:1 All Phase Angles)
GPE
η
Ï
9.0
11
â
dB
50
â
â
%
No Degradation in Output Power
RF
INPUT
Z1
C1
Z2
C2
C3
L2
R3
C13
L1
DUT
C9
L3
Z3
L4
R2
C5
C4
C12
R1
C11
+
L5
+
28 Vdc
C10
â
C7
Z4
RF
OUTPUT
C6
C8
C1 â 1.0 â 10 pF Johanson, Capacitor (JMC 5201)
C2, C3, C6, C8 â 1.0â 20 pF Johanson Capacitor
C4, C5 â 36 pF ATC âBâ Style Chip Capacitor
C7, C9, C13 â 100 pF UNELCO Capacitor
C11 â 680 pF Feedthru
C10 â 1.0 µF 50 V Tantalum
C12 â 0.1 µF Erie Redcap
L1 â 8 Turns #26 AWG Enameled, 1/16â³ ID Closewound
L2, L5 â Ferroxcube VK200â19/4B Ferrite Choke
L3 â 8 Turns #20 AWG Enameled, 1/4â³ ID Closewound
L4 â 4 Turns #26 AWG 0.1â³ ID
R1 â 10 Ohm 2.0 W Carbon
R2, R3 â 10 Ohm 1.0 W Carbon
Z1 â Microstrip 0.19â³ W x 1.28â³ L
Z2 â Microstrip 0.28â³ W x 1.0â³ L
Z3 â Microstrip 0.31â³ W x 1.0â³ L
Z4 â Microstrip 0.31â³ W x 0.9â³ L
Board â Glass Teflon εr = 2.56 t = 0.062â³
Input/Output Connectors â Type N UG58 A/U
Figure 1. 400 MHz Test Amplifier
MRF326
2
MOTOROLA RF DEVICE DATA
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