MRF326 Datasheet, PDF (1/6 Pages) Motorola, Inc – BROADBAND RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF326/D
The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband large–signal output amplifier stages in the
100 to 500 MHz frequency range.
• Guaranteed Performance @ 400 MHz, 28 Vdc
Output Power = 40 Watts
Minimum Gain = 9.0 dB
• Built–In Matching Network for Broadband Operation
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Gold Metallization System for High Reliability Applications
MRF326
40 W, 225 to 400 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current — Peak
VCEO
VCBO
VEBO
IC
33
Vdc
60
Vdc
4.0
Vdc
4.5
Adc
6.0
Total Device Dissipation @ TC = 25°C (1)
PD
Derate above 25°C
110
Watts
0.63
W/°C
CASE 316–01, STYLE 1
Storage Temperature Range
THERMAL CHARACTERISTICS
Tstg
– 65 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R_θJC
1.6
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 40 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 40 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 4.0 mAdc, IC = 0)
Collector–Base Breakdown Voltage
(IC = 40 mAdc, IE = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
V(BR)CEO
33
—
—
Vdc
V(BR)CES
60
—
—
Vdc
V(BR)EBO
4.0
—
—
Vdc
V(BR)CBO
60
—
—
Vdc
ICBO
—
—
4.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 Adc, VCE = 5.0 Vdc)
hFE
20
50
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
45
60
pF
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF326
1