MRF325 Datasheet, PDF (2/6 Pages) Motorola, Inc – BROADBAND RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
30
40
pF
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, Pout = 30 W, f = 400 MHz)
Collector Efficiency
(VCC = 28 Vdc, Pout = 30 W, f = 400 MHz)
Load Mismatch
(VCC = 28 Vdc, Pout = 30 W, f = 400 MHz,
VSWR = 30:1 all angles)
GPE
η
ψ
8.5
9.5
—
dB
50
60
—
%
No Degradation in Output Power
RF
INPUT
+
C10
–
C11
C12
L3
C14
+
C13
L1
C2
Z1
Z2
C1
C3 C4 C5
L2
DUT
C6
C8
Z3
C7
C9
+ _VCC
– ^{28 Vdc}
RF
OUTPUT
C1, C9 — 1.0 – 10 pF Johanson Capacitor (JMC 5201)
C2, C3, C6, C7 — 1.0– 20 pF Johanson Capacitor (JMC 5501)
C4, C5 — 36 pF ATC 100–mil Chip Capacitor
C8 — 100 pF UNELCO
C10, C13 — 1.0 µF 50 V Tantalum
C11, C14 — 680 pF Feedthru
C12 — 0.1 µF Erie Redcap
L1 — 8 Turns #26 AWG Enameled, 1/16″ ID Closewound
L1 — with Ferroxcube Bead (#56–590–65/4B) on Ground End
L2 — 14 Turns, #22 AWG Enameled, Closewound on a 470 Ω,
L2 — 2.0 Watt Resistor with Ferroxcube Bead (#56–590–65/4B)
L2 — on Cold End of L2
L3 — Ferroxcube VK200–19/4B Ferrite Choke
Z1 — Microstrip 0.19″ W x 0.88″ L
Z2 — Microstrip 0.28″ W x 1.0″ L
Z3 — Microstrip 0.31″ W x 1.25″ L
Board — Glass Teflon ε_r = 2.56, t = 0.062″
Input/Output Connectors — Type N
DUT Socket Lead Frame Etched from 80–mil–Thick Copper
Figure 1. 400 MHz Test Circuit
MRF325
2–2
MOTOROLA RF DEVICE DATA