MRF325 Datasheet, PDF (1/6 Pages) Motorola, Inc – BROADBAND RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF325/D
The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband large–signal output and driver amplifier
stages in 100 to 500 MHz frequency range.
• Specified 28 Volt, 400 MHz Characteristics —
Output Power = 30 Watts
Minimum Gain = 8.5 dB
Efficiency = 54% (Min)
• Built–In Matching Network for Broadband Operation Using Internal Match-
ing Techniques
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Gold Metallization for High Reliability Applications
MRF325
30 W, 225 to 400 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current — Peak
VCEO
33
Vdc
VCBO
60
Vdc
VEBO
4.0
Vdc
IC
3.4
Adc
4.5
Total Device Dissipation @ TC = 25°C (1)
PD
Derate above 25°C
82
Watts
0.47
W/°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Tstg
– 65 to +150
°C
CASE 316–01, STYLE 1
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R_θJC
2.13
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 30 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 30 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 3.0 mAdc, IC = 0)
Collector–Base Breakdown Voltage
(IC = 30 mAdc, IE = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
V(BR)CEO
33
—
—
Vdc
V(BR)CES
60
—
—
Vdc
V(BR)EBO
4.0
—
—
Vdc
V(BR)CBO
60
—
—
Vdc
ICBO
—
—
3.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1.5 Adc, VCE = 5.0 Vdc)
hFE
20
—
80
—
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF325
2–1