MRF321 Datasheet, PDF (2/6 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
10
12
pF
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, Pout = 10 W, f = 400 MHz)
Collector Efficiency
(VCC = 28 Vdc, Pout = 10 W, f = 400 MHz)
Load Mismatch
(VCC = 28 Vdc, Pout = 10 W, f = 400 MHz,
VSWR = 30:1 all phase angles)
GPE
η
ψ
12
13
—
dB
50
60
—
%
No Degradation in Output Power
+
5V
–
RF
INPUT
R2
D1
R3
R4 C9
Z1
Z2
L3
L1
DUT
C1
C2
C3
C4
L4
C11
C12
C10
Z3
L2
C5
R1
Z4
C6
+
C13
–
+
28 V
–
C8
RF
OUTPUT
C7
C1, C2, C3 — 1.0 – 20 pF Johanson Trimmer (JMC 5501)
C3, C4 — 47 pF ATC Chip Capacitor
C5, C10 — 0.1 µF Erie Redcap
C7 — 0.5 – 10 pF Johanson Trimmer (JMC 5201)
C8 — 0.018 µF Vitramon Chip Capacitor
C9 — 200 pF UNELCO Capacitor
C11, C12 — 680 pF Feedthru
C13 — 1.0 µF, 50 Volt Tantalum Capacitor
D1 — 1N4001
L1 — 0.33 µH Molded Choke with Ferroxcube Bead
L1 — (Ferroxcube 56–590–65/4B) on Ground End of Coil
L2 — 4 Turns #20 Enamel, 1/8″ ID
L3 — 6 Turns #20 Enamel, 1/4″ ID
L4 — Ferroxcube VK200–19/4B
R1 — 5.1 Ω, 1/4 Watt
R2 — 120 Ω, 1.0 Watt
R3 — 20 Ω, 1/2 Watt
R4 — 47 Ω, 1/2 Watt
Z1 — Microstrip 0.1″ W x 1.35″ L
Z2 — Microstrip 0.1″ W x 0.55″ L
Z3 — Microstrip 0.1″ W x 0.8″ L
Z4 — Microstrip 0.1″ W x 1.75″ L
Board — Glass Teflon, ε_R = 2.56, t = 0.062″
Input/Output Connectors — Type N
Figure 1. 400 MHz Test Circuit Schematic
MRF321
2
MOTOROLA RF DEVICE DATA