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MRF321 Datasheet, PDF (1/6 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband largeâsignal driver and predriver amplifier
stages in 200 â 500 MHz frequency range.
⢠Guaranteed Performance at 400 MHz, 28 Vdc
Output Power = 10 Watts
Power Gain = 12 dB Min
Efficiency = 50% Min
⢠100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
⢠Gold Metallization System for High Reliability
⢠ComputerâControlled Wirebonding Gives Consistent Input Impedance
Order this document
by MRF321/D
MRF321
10 W, 400 MHz
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Collector Current â Continuous
Collector Current â Peak
VCEO
33
Vdc
VCBO
60
Vdc
VEBO
4.0
Vdc
IC
1.1
Adc
1.5
Total Device Dissipation @ TA = 25°C (1)
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
PD
27
Watts
160
mW/°C
Tstg
â 65 to +150
°C
CASE 244â04, STYLE 1
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
6.4
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
V(BR)CEO
33
â
â
Vdc
CollectorâEmitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
V(BR)CES
60
â
â
Vdc
CollectorâBase Breakdown Voltage
(IC = 20 mAdc, IE = 0)
V(BR)CBO
60
â
â
Vdc
EmitterâBase Breakdown Voltage
(IE = 2.0 mAdc, IC = 0)
V(BR)EBO
4.0
â
â
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
â
â
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 500 mA, VCE = 5.0 Vdc)
hFE
20
â
80
â
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF321
1
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