MRF21085 Datasheet, PDF (2/12 Pages) Motorola, Inc – RF Power Field Effect Transistors

Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain - Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 100 µAdc)
Zero Gate Voltage Drain Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
V_(BR)DSS
65
—
—
Vdc
I_DSS
—
—
10
µAdc
I_GSS
—
—
1
µAdc
ON CHARACTERISTICS (DC)
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 200 µAdc)
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 1000 mAdc)
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 2 Adc)
Forward Transconductance
(V_DS = 10 Vdc, I_D = 2 Adc)
V_GS(th)
2
V_GS(Q)
3
V_DS(on)
—
g_fs
—
—
4
Vdc
3.9
5
Vdc
0.18
0.21
Vdc
6
—
S
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(V_DS = 28 Vdc, V_GS = 0, f = 1.0 MHz)
C_rss
—
3.6
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and
IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Common - Source Amplifier Power Gain
G_ps
12
13.6
—
dB
(V_DD = 28 Vdc, P_out = 19 W Avg., I_DQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Drain Efficiency
η
(V_DD = 28 Vdc, P_out = 19 W Avg., I_DQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
20
23
—
%
Third Order Intermodulation Distortion
IM3
(V_DD = 28 Vdc, P_out = 19 W Avg., I_DQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz BW at f1 - 10 MHz and f2 +10 MHz
referenced to carrier channel power.)
—
- 37.5
- 35
dBc
Adjacent Channel Power Ratio
ACPR
—
(V_DD = 28 Vdc, P_out = 19 W Avg., I_DQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz at f1 - 5 MHz and f2 +5 MHz.)
- 41
- 38
dBc
Input Return Loss
IRL
—
- 12
-9
dB
(V_DD = 28 Vdc, P_out = 19 W Avg., I_DQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Output Mismatch Stress
Ψ
(V_DD = 28 Vdc, P_out = 90 W CW, I_DQ = 1000 mA, f = 2170 MHz
VSWR = 5:1, All Phase Angles at Frequency of Tests)
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
(continued)
MRF21085R3 MRF21085SR3 MRF21085LSR3
MOTOROLA RF DEVICE DATA
2
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