MRF21085 Datasheet, PDF (1/12 Pages) Motorola, Inc – RF Power Field Effect Transistors

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MRF21085/D
The RF MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - carrier W - CDMA Performance for V_DD = 28 Volts,
I_DQ = 1000 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability
on CCDF.
Output Power — 19 Watts Avg.
Power Gain — 13.6 dB
Efficiency — 23%
IM3 — - 37.5 dBc
ACPR — - 41 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 90 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF21085R3
MRF21085SR3
MRF21085LSR3
2170 MHz, 90 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF21085R3
CASE 465A - 06, STYLE 1
NI - 780S
MRF21085SR3, MRF21085LSR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
Symbol
R_θJC
Value
65
- 0.5, +15
224
1.28
- 65 to +150
200
Value (1)
0.78
Class
1 (Minimum)
M3 (Minimum)
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
 M^Mo^Otor^To^Ola,^RIn^Oc.^L2^A00^R4 ^{F DEVICE DATA}
MRF21085R3 MRF21085SR3 MRF21085LSR3
For More Information On This Product,
Go to: www.freescale.com
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