MRF1946 Datasheet, PDF (2/6 Pages) Motorola, Inc – RF POWER TRANSISTORS NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
75
100
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 30 W, f = 175 MHz)
Gpe
10
11
—
dB
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 30 W, f = 175 MHz)
η
60
70
—
%
Load Mismatch
(VCC = 15.5 Vdc, Pin = 2.0 dB Overdrive,
Load VSWR = 30:1)
ψ
No Degradation in Power Output
L5
RFC2
C8
C9
+
C10
+12.5
Vdc
C1
L1
C2
C3
L2
DUT
C4
RFC1
B
L3
C11
L4
C7
C5
C6
C1 — 56 pF Mini–Unelco, 3HS0006–56
C2 — 47 pF Mini–Unelco, 3HS0006–47
C3, C4 — 180 pF Chip Cap, ATC 100B181JC500
C5 — 150 pF Unelco, J101–150
C6 — 39 pF Mini–Unelco, 3HS0006–39
C7, C8 — 1000 pF Chip Cap, ATC 100B102JC50
C9 — 0.1 µF Ceramic Capacitor
C10 — 10 µF, 25 V Electrolytic Capacitor
C11 — 56 pF Mini–Unelco, 3HS0006–56
L1 — 2 Turns #18 AWG, 0.125″ ID
L2, L3 — Circuit Board and Mounting Pad Inductance
L4 — 3 Turns #18 AWG, 0.125″ ID
L5 — 6 Turns #16 Enameled, 0.250″ ID
RFC1 — 0.15 µH Molded Choke w/Ferrite Bead
RFC2 — Ferrite Choke, Fair Rite VK200–4B
Board Material — 1/32, Glass Teflon, 1 oz. Cu Plating
Bead — Ferroxcube
Figure 1. Broadband Test Circuit Schematic
MRF1946 MRF1946A
2
MOTOROLA RF DEVICE DATA