MRF1946 Datasheet, PDF (1/6 Pages) Motorola, Inc – RF POWER TRANSISTORS NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
Power Transistors
. . . designed for 12.5 volt large–signal power amplifiers in commercial and
industrial equipment.
• High Common Emitter Power Gain
• Specified 12.5 V, 175 MHz Performance
Output Power = 30 Watts
Power Gain = 10 dB
Efficiency = 60%
• Diffused Emitter Resistor Ballasting
• Characterized to 220 MHz
• Load Mismatch at High Line and Overdrive Conditions
Order this document
by MRF1946/D
MRF1946
MRF1946A
30 W, 136 – 220 MHz
RF POWER
TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
Storage Temperature Range
Tstg
Junction Temperature
TJ
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Value
16
36
4.0
8.0
100
0.57
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
V(BR)CEO
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
V(BR)CES
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C)
ICES
ON CHARACTERISTICS
DC Current Gain
hFE
(IC = 1.0 Adc, VCE = 5.0 Vdc)
Symbol
R_θJC
Min
16
36
4.0
—
40
CASE 211–07, STYLE 1
MRF1946
CASE 145A–09, STYLE 1
MRF1946A
Max
1.75
Typ
Max
—
—
—
—
—
—
—
5.0
Unit
°C/W
Unit
Vdc
Vdc
Vdc
mAdc
75
150
—
(continued)
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF1946 MRF1946A
1