MRF185_02 Datasheet, PDF (2/4 Pages) Motorola, Inc – N-Channel Enhancement-Mode Lateral MOSFET

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ELECTRICAL CHARACTERISTICS – continued (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
ON CHARACTERISTICS
Gate Quiescent Voltage
(V_DS = 26 V, I_D = 300 mA per side)
Delta Quiescent Voltage between sides
(V_DS = 26 V, I_D = 300 mA per side)
Drain–Source On–Voltage
(V_GS = 10 V, I_D = 3 A per side)
Forward Transconductance
(V_DS = 10 V, I_D = 3 A per side)
DYNAMIC CHARACTERISTICS
Output Capacitance
(V_DS = 28 V, V_GS = 0 V, f = 1 MHz)
Reverse Transfer Capacitance
(V_DS = 28 V, V_GS = 0 V, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(V_DD = 28 V, P_out = 85 W, f = 960 MHz, I_DQ = 600 mA)
Drain Efficiency
(V_DD = 28 V, P_out = 85 W, f = 960 MHz, I_DQ = 600 mA)
Load Mismatch
(V_DD = 28 Vdc, P_out = 85 W, f = 960 MHz, I_DQ = 600 mA,
Load VSWR 5:1 at All Phase Angles)
V_GS(Q)
3
4
5
∆V_GS(Q)
–
0.15
0.3
V_DS(on)
–
0.75
1
g_fs
1.6
2
–
C_oss
–
38
–
C_rss
–
4.6
6
G_ps
11
14
–
η
45
53
–
Ψ
No Degradation in Output Power
Unit
Vdc
Vdc
Vdc
s
pF
pF
dB
%
MRF185
2
MOTOROLA RF DEVICE DATA
Archived 2005