MRF185_02 Datasheet, PDF (1/4 Pages) Motorola, Inc – N-Channel Enhancement-Mode Lateral MOSFET

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF185/D
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
• High Gain, Rugged Device
• Broadband Performance from HF to 1 GHz
• Bottom Side Source Eliminates DC Isolators, Reducing Common Mode
Inductances
MRF185
1.0 GHz, 85 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
D
G
S
G
(FLANGE)
D
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Storage Temperature Range
Operating Junction Temperature
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 1 mAdc)
Zero Gate Voltage Drain Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate–Source Leakage Current
(V_GS = 20 Vdc, V_DS = 0 Vdc)
V_(BR)DSS
I_DSS
I_GSS
Symbol
V_DSS
V_GS
T_stg
T_J
P_D
Symbol
R_θJC
Min
65
–
–
CASE 375B–04, STYLE 1
NI–860
Value
65
±20
– 65 to +150
200
250
1.45
Max
0.7
Typ
Max
–
–
–
1
–
1
Unit
Vdc
Vdc
°C
°C
Watts
W/°C
Unit
°C/W
Unit
Vdc
µAdc
µAdc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
 M^Mo^Oto^Tro^Ola,^RIn^Oc.^L2^A00^R2 ^{F DEVICE DATA}
MRF185
1
Archived 2005