MRF185 Datasheet, PDF (2/4 Pages) Motorola, Inc – LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Quiescent Voltage
(VDS = 26 V, ID = 300 mA per side)
Delta Quiescent Voltage between sides
(VDS = 26 V, ID = 300 mA per side)
Drain–Source On–Voltage
(VGS = 10 V, ID = 3 A per side)
Forward Transconductance
(VDS = 10 V, ID = 3 A per side)
VGS(Q)
3
∆VGS(Q)
–
VDS(on)
–
gfs
1.6
4
0.15
0.75
2
5
Vdc
0.3
Vdc
1
Vdc
–
s
DYNAMIC CHARACTERISTICS
Output Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Coss
–
38
–
pF
Crss
–
4.6
6
pF
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 V, Pout = 85 W, f = 960 MHz, IDQ = 600 mA)
Gps
11
14
–
dB
Drain Efficiency
(VDD = 28 V, Pout = 85 W, f = 960 MHz, IDQ = 600 mA)
η
45
55
–
%
Load Mismatch
(VDD = 28 Vdc, Pout = 85 W, f = 960 MHz, IDQ = 600 mA,
Ψ
Load VSWR 5:1 at All Phase Angles)
No Degradation in Output Power
MRF185
2
MOTOROLA RF DEVICE DATA