MRF185 Datasheet, PDF (1/4 Pages) Motorola, Inc – LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
The RF MOSFET Line
RF POWER
Field-Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
• High Gain, Rugged Device
• Broadband Performance from HF to 1 GHz
• Bottom Side Source Eliminates DC Isolators, Reducing Common
Mode Inductances
D
G
S
G
(FLANGE)
D
Order this document
by MRF185/D
MRF185
85 WATTS, 1.0 GHz
28 VOLTS
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375B–02, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Storage Temperature Range
Operating Junction Temperature
Total Device Dissipation @ TC = 25°C
Derate above 25°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 1 mAdc)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0 V)
IDSS
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0 V)
IGSS
Symbol
VDSS
VGS
Tstg
TJ
PD
Symbol
R_θJC
Min
65
–
–
Value
65
± 20
– 65 to +150
200
250
1.45
Max
0.7
Typ
Max
–
–
–
1
–
1
Unit
Vdc
Vdc
°C
°C
Watts
W/°C
Unit
°C/W
Unit
Vdc
µAdc
µAdc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF185
1