MRF18085A Datasheet, PDF (2/8 Pages) Motorola, Inc – The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 100 µAdc)
Zero Gate Voltage Drain Current
(V_DS = 26 Vdc, V_GS = 0 Vdc)
Gate–Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 200 µAdc)
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 600 mAdc)
Drain–Source On–Voltage
(V_GS = 10 Vdc, I_D = 2 Adc)
Forward Transconductance
(V_DS = 10 Vdc, I_D = 2 Adc)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V_DS = 26 Vdc, V_GS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Common–Source Amplifier Power Gain @ 85 W (2)
(V_DD = 26 Vdc, I_DQ = 800 mA, f = 1805 – 1880 MHz)
Drain Efficiency @ 85 W (2)
(V_DD = 26 Vdc, I_DQ = 800 mA, f = 1805 – 1880 MHz)
Input Return Loss @ 85 W (2)
(V_DD = 26 Vdc, I_DQ = 800 mA, f = 1805 – 1880 MHz)
P_out, 1 dB Compression Point
(V_DD = 26 Vdc, I_DQ = 800 mA, f = 1805 – 1880 MHz)
Output Mismatch Stress @ P1dB
(V_DD = 26 Vdc, I_DQ = 800 mA, f = 1805 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Tests)
V_(BR)DSS
65
—
—
Vdc
I_DSS
—
—
10
µAdc
I_GSS
—
—
1
µAdc
V_GS(th)
2
—
4
Vdc
V_GS(Q)
2.5
3.9
4.5
Vdc
V_DS(on)
—
0.15
—
Vdc
g_fs
—
6.0
—
S
C_rss
—
3.6
—
pF
G_ps
η
IRL
P1dB
Ψ
13.5
15
48
52
—
–12
83
90
—
dB
—
%
–9
dB
—
Watts
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
(2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch–to–batch
consistency.
MRF18085A MRF18085AR3 MRF18085ALSR3
2
MOTOROLA RF DEVICE DATA