MRF18085A Datasheet, PDF (1/8 Pages) Motorola, Inc – The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF18085A/D
The RF MOSFET Line
MRF18085A
RF Power Field Effect Transistors _MRF18085AR3
N–Channel Enhancement–Mode Lateral MOSFETs _{MRF18085ALSR3}
Designed for GSM and GSM EDGE base station applications with
frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier
amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and
WLL applications. Specified for GSM–GSM EDGE 1805 – 1880 MHz.
• GSM and GSM EDGE Performance, Full Frequency Band
(1805–1880 MHz)
Power Gain – 15 dB (Typ) @ 85 Watts CW
Efficiency – 52% (Typ) @ 85 Watts CW
GSM/GSM EDGE
1.8 – 1.88 GHz, 85 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power,
@ f = 1805 MHz
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465–06, STYLE 1
NI–780
MRF18085A, MRF18085AR3
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
CASE 465A–06, STYLE 1
NI–780S
MRF18085ALSR3
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
Symbol
R_θJC
Value
65
–0.5, +15
273
1.56
–65 to +200
200
Max
0.64
Class
1 (Typical)
M3 (Typical)
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 0
 M^Mo^Oto^Tro^Ola,^RIn^Oc.^L2^A00^R2 ^{F DEVICE DATA}
MRF18085A MRF18085AR3 MRF18085ALSR3
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