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MRF1550T1 Datasheet, PDF (2/12 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS
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Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
IDSS
Gate–Source Leakage Current
(VGS = 10 Vdc, VDS = 0 Vdc)
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 800 µA)
VGS(th)
Drain–Source On–Voltage
(VGS = 5 Vdc, ID = 1.2 A)
RDS(on)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 4.0 Adc)
VDS(on)
DYNAMIC CHARACTERISTICS
Input Capacitance (Includes Input Matching Capacitance)
Ciss
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Coss
Reverse Transfer Capacitance
Crss
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
RF CHARACTERISTICS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
Gps
(VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA) f = 175 MHz
Drain Efficiency
η
(VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA) f = 175 MHz
Load Mismatch
Ψ
(VDD = 15.6 Vdc, f = 175 MHz, 2 dB Input Overdrive, VSWR 20:1 at
All Phase Angles)
Min Typ Max
—
—
1
—
—
0.5
Unit
µAdc
µAdc
1
—
3
Vdc
—
—
0.5
Ω
—
—
1
Vdc
—
—
500
pF
—
—
250
pF
—
—
35
pF
dB
10
—
—
%
50
—
—
No Degradation in Output Power
Before and After Test
MRF1550T1 MRF1550FT1
2
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
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