MRF1550T1 Datasheet, PDF (1/12 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MRF1550T1/D
The RF MOSFET Line
RF Power Field Effect Transistors ^MRF1550T1
N–Channel Enhancement–Mode Lateral MOSFETs MRF1550FT1
Designed for broadband commercial and industrial applications with frequen-
cies to 175 MHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common source amplifier applications in
12.5 volt mobile FM equipment.
• Specified Performance @ 175 MHz, 12.5 Volts
Output Power — 50 Watts
Power Gain — 12 dB
Efficiency — 50%
• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Broadband–Full Power Across the Band: 135–175 MHz
• Broadband Demonstration Amplifier Information Available
Upon Request
• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
175 MHz, 50 W, 12.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1264–09, STYLE 1
TO–272
PLASTIC
MRF1550T1
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T_C = 25°C (1)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
CASE 1264A–02, STYLE 1
TO–272 STRAIGHT LEAD
PLASTIC
MRF1550FT1
Symbol
V_DSS
V_GS
I_D
P_D
T_stg
T_J
Value
40
±20
12
165
0.50
–65 to +150
175
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1)
Calculated
based
on
the
formula
P_D
=
TJ _– TC
R_θJC
Symbol
R_θJC
Max
0.75
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
 M^Mo^Oto^Tro^Ola,^RIn^Oc.^L2^A00^R3 ^{F DEVICE DATA} _{For More Information On This Product,}
Go to: www.freescale.com
MRF1550T1 MRF1550FT1
1