MRF15060 Datasheet, PDF (2/8 Pages) Motorola, Inc – RF POWER BIPOLAR TRANSISTORS

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
V(BR)CEO
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0 mAdc)
V(BR)EBO
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0)
ICES
ON CHARACTERISTICS
DC Current Gain
hFE
(IC = 1 Adc, VCE = 5 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
Cob
(VCB = 26 Vdc, IE = 0, f = 1.0 MHz) ⁽¹⁾
FUNCTIONAL TESTS (In Motorola Test Circuit. See Figure 1)
Common–Emitter Amplifier Power Gain
Gpe
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 1490.0 MHz, f2 = 1490.1 MHz)
Collector Efficiency
η
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 1490.0 MHz, f2 = 1490.1 MHz)
3rd Order Intermodulation Distortion
IMD
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 1490.0 MHz, f2 = 1490.1 MHz)
Input Return Loss
IRL
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 1490.0 MHz, f2 = 1490.1 MHz)
Output Mismatch Stress
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
ψ
f1 = 1490.0 MHz, f2 = 1490.1 MHz,
VSWR = 3:1, at All Phase Angles)
(1) For information only. This part is collector matched.
Min
Typ
Max
Unit
25
—
—
Vdc
60
—
—
Vdc
3
3.5
—
Vdc
—
—
10
mAdc
20
40
80
—
—
55
—
pF
10
11.7
—
dB
33
38
—
dB
—
– 32
– 28
dB
12
20
—
dB
No Degradation in Output Power
MRF15060 MRF15060S
2
MOTOROLA RF DEVICE DATA