MRF15060 Datasheet, PDF (1/8 Pages) Motorola, Inc – RF POWER BIPOLAR TRANSISTORS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron Bipolar Line
RF Power Bipolar Transistors
Designed for broadband commercial and industrial applications at frequen-
cies from 1400 to 1600 MHz. The high gain and broadband performance of
these devices makes them ideal for large–signal, common–emitter class A and
class AB amplifier applications in 26 volt amplitude modulated and multi–carrier
base station equipment.
• Guaranteed Two–Tone Performance at 1490 MHz, 26 Volts
Output Power — 60 Watts (PEP)
Power Gain — 10 dB
Efficiency — 33%
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• All Gold Metal for Ultra Reliability
• Capable of Handling 3:1 VSWR @ 26 Vdc, 1490 MHz, 60 Watts (PEP)
Output Power
Order this document
by MRF15060/D
MRF15060
MRF15060S
60 W, 1.49 GHz
RF POWER
BIPOLAR
TRANSISTORS
CASE 451–04, STYLE 1
(MRF15060)
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current – Continuous
Total Device Dissipation @ TC = 70°C
Derate above 70°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction to Case
CASE 451A–01, STYLE 1
(MF15060S)
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
TJ
Symbol
R_θJC
Value
25
60
60
8
185
1.43
– 65 to +150
200
Max
0.7
Unit
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
©MMOotoTrOolaR, OIncL.A19R96F DEVICE DATA
MRF15060 MRF15060S
1