MRF148 Datasheet, PDF (2/6 Pages) Motorola, Inc – N-CHANNEL MOS LINEAR RF POWER FET

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 10 mA)
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 10 mA)
VGS(th)
Drain–Source On–Voltage (VGS = 10 V, ID = 2.5 A)
Forward Transconductance (VDS = 10 V, ID = 2.5 A)
VDS(on)
gfs
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Ciss
Coss
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Crss
FUNCTIONAL TESTS (SSB)
Common Source Amplifier Power Gain
(30 MHz)
Gps
(VDD = 50 V, Pout = 30 W (PEP), IDQ = 100 mA) (175 MHz)
Drain Efficiency
(30 W PEP)
η
(VDD = 50 V, f = 30 MHz, IDQ = 100 mA)
(30 W CW)
Intermodulation Distortion
(VDD = 50 V, Pout = 30 W (PEP),
f = 30; 30.001 MHz, IDQ = 100 mA)
Load Mismatch
(VDD = 50 V, Pout = 30 W (PEP), f = 30; 30.001 MHz,
IDQ = 100 mA, VSWR 30:1 at all Phase Angles)
IMD(d3)
IMD(d11)
ψ
CLASS A PERFORMANCE
Intermodulation Distortion (1) and Power Gain
(VDD = 50 V, Pout = 10 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, IDQ = 1.0 A)
GPS
IMD(d3)
IMD(d9 _{– 13)}
NOTE:
1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
Min
Typ
Max
Unit
125
—
—
Vdc
—
—
1.0
mAdc
—
—
100
nAdc
1.0
3.0
5.0
Vdc
1.0
3.0
5.0
Vdc
0.8
1.2
—
mhos
—
50
—
pF
—
35
—
pF
—
8.0
—
pF
—
18
—
dB
—
15
—
—
40
—
%
—
50
—
dB
—
– 35
—
—
– 60
—
No Degradation in Output Power
—
20
—
dB
—
– 50
—
—
– 70
—
BIAS +
0 – 10 V _–
RF
INPUT
C1
R1
C4
DUT
R3 ^C2
T1
C8
R2
L1
C5
T2
L2
C6
+
50 V
C7
–
RF
OUTPUT
C3
R4
C1, C2, C3, C4, C5, C6 — 0.1 µF Ceramic Chip or Equivalent
C7 — 10 µF, 100 V Electrolytic
C8 — 100 pF Dipped Mica
L1 — VK200 20/4B Ferrite Choke or Equivalent (3.0 µH)
L2 — Ferrite Bead(s), 2.0 µH
R1, R2 — 200 Ω, 1/2 W Carbon
R3 — 4.7 Ω, 1/2 W Carbon
R4 — 470 Ω, 1.0 W Carbon
T1 — 4:1 Impedance Transformer
T2 — 1:2 Impedance Transformer
Figure 1. 2.0 to 50 MHz Broadband Test Circuit
MRF148
2
MOTOROLA RF DEVICE DATA