MRF148 Datasheet, PDF (1/6 Pages) Motorola, Inc – N-CHANNEL MOS LINEAR RF POWER FET

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode
Designed for power amplifier applications in industrial, commercial and
amateur radio equipment to 175 MHz.
• Superior High Order IMD
• Specified 50 Volts, 30 MHz Characteristics
Output Power = 30 Watts
Power Gain = 18 dB (Typ)
Efficiency = 40% (Typ)
• IMD(d3) (30 W PEP) — – 35 dB (Typ)
• IMD(d11) (30 W PEP) — – 60 dB (Typ)
• 100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
D
Order this document
by MRF148/D
MRF148
30 W, to 175 MHz
N–CHANNEL MOS
LINEAR RF POWER
FET
G
S
CASE 211–07, STYLE 2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
120
VDGO
120
VGS
± 40
ID
6.0
PD
115
0.66
Vdc
Vdc
Vdc
Adc
Watts
W/°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Tstg
– 65 to +150
°C
TJ
200
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R_θJC
1.52
°C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
MRF148
1