MRF10070 Datasheet, PDF (2/4 Pages) Motorola, Inc – MICROWAVE POWER TRANSISTOR

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0)
V(BR)CES
Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCB = 50 Vdc, IE = 0)
V(BR)CBO
V(BR)EBO
ICBO
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, Pout = 70 W Peak, f = 1090 MHz)
GPB
Collector Efficiency
η
(VCC = 50 Vdc, Pout = 70 W Peak, f = 1090 MHz)
Load Mismatch
ψ
(VCC = 50 Vdc, Pout = 70 W Peak, f = 1090 MHz,
Load VSWR = 10:1 All Phase Angles)
Min
Typ
Max
Unit
65
—
—
Vdc
65
—
—
Vdc
3.5
—
—
Vdc
—
—
25
mAdc
20
—
—
—
9.0
10
—
dB
40
—
—
%
No Degradation in Output Power
Before or After Test
+
+
C4
–
Z6
C2
C3
Z2
Z1
Z3
Z4
D.U.T.
L1
C1
Z11
Z10
Z5
Z7
Z8
Z9
Z12 Z13
C1 — 82 pF 100 mil Chip Capacitor
C2 — 82 pF 100 mil Chip Capacitor
C3 — 0.1 µF
C4 — 100 µF/100 Vdc Electrolytic
L1 — 3 turns #18 AWG, 1/8″ ID, 0.18″ Long
Z1 – Z13 — Microstrip, see details below
Board Material — 0.030″ Glass Teflon^®; 2 oz.
Cu clad; both sides; ∈_r = 2.55
MRF10070
2
79
1100
583
100
168
50
791
203
300
300 ³⁰⁰
681
374
536
50
459 ²⁶⁴
79
100
578 ⁸⁶⁵
266 ₂₆₅
352 ⁷⁹
220
1113
203
595
79
100
283 283
159 ⁷⁹
226
1.000
Figure 1. Test Circuit
MOTOROLA RF DEVICE DATA