MRF10070 Datasheet, PDF (1/4 Pages) Motorola, Inc – MICROWAVE POWER TRANSISTOR

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Pulse
Power Transistor
Designed for 1025 –1150 MHz pulse common base amplifier applications
such as TCAS, TACAN and Mode–S transmitters.
• Guaranteed Performance @ 1090 MHz
Output Power = 70 Watts Peak
Gain = 9.0 dB Min
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Characterized with 10 µs, 10% Duty Cycle Pulses
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input and Output Matching
• Hermetically Sealed Package
• Recommended Driver for MRF10500 Transistor or a Pair of MRF10350
Transistors
Order this document
by MRF10070/D
MRF10070
70 W (PEAK)
1025 – 1150 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 376C–01, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
65
Vdc
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Peak (1)
Total Device Dissipation @ TC = 25°C (1), (2)
Derate above 25°C
VCBO
65
Vdc
VEBO
3.5
Vdc
IC
8.8
Adc
PD
438
Watts
2.5
W/°C
Storage Temperature Range
Junction Temperature
THERMAL CHARACTERISTICS
Tstg
– 65 to + 200
°C
TJ
200
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (3)
R_θJC
0.4
°C/W
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θ_JC value
measured @ 10 µs, 10%.)
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF10070
1