MRF10005 Datasheet, PDF (2/4 Pages) Motorola, Inc – MICROWAVE POWER TRANSISTOR

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0)
V(BR)CES
Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 0.5 mAdc, IC = 0)
Collector Cutoff Current (VCB = 28 Vdc, IE = 0)
V(BR)CBO
V(BR)EBO
ICBO
ON CHARACTERISTICS
DC Current Gain (IC = 500 mAdc, VCE = 5.0 Vdc)
hFE
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cob
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz)
GPB
Collector Efficiency
η
(VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz)
Load Mismatch
ψ
(VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz,
VSWR = 10:1 All Phase Angles)
Min
Typ
Max
Unit
55
—
—
Vdc
55
—
—
Vdc
3.5
—
—
Vdc
—
—
1.0
mAdc
20
—
100
—
—
7.0
10
pF
8.5
10.3
—
dB
45
55
—
%
No Degradation in Output Power
+
L1
C3
C4
C5
+
28 Vdc
–
RF
INPUT
Z10
C2
Z9
D.U.T.
Z2
Z1
Z4
Z3
Z5
Z6
Z7
Z8
C1
RF
OUTPUT
C1, C2, C3 — 220 pF 100 mil Chip Capacitor
C4 — 0.1 µF
C5 — 47 µF/50 V Electrolytic
L1 — 3 turn #18 AWG, 1/8″ ID, 0.18″ Long
Z1 – Z10 — Microstrip, see details below
Board Material — 0.030″ Glass Teflon,
2.0 oz. Copper, ε_r = 2.55
0.080
0.25
0.90
0.050
0.70
0.37
0.20
0.57
0.40
0.13
0.050
0.375
0.08
0.50 0.20 0.660
0.16
0.25
0.40
0.25
0.275
MRF10005
2
Figure 1. Test Circuit
MOTOROLA RF DEVICE DATA