MRF10005 Datasheet, PDF (1/4 Pages) Motorola, Inc – MICROWAVE POWER TRANSISTOR

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Power Transistor
. . . designed for CW and long pulsed common base amplifier applications,
such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high
overall duty cycles.
• Guaranteed Performance @ 1.215 GHz, 28 Vdc
Output Power = 5.0 Watts CW
Minimum Gain = 8.5 dB, 10.3 dB (Typ)
• RF Performance Curves given for 28 Vdc and 36 Vdc Operation
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Hermetically Sealed Industry Standard Package
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input Matching for Broadband Operation
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by MRF10005/D
MRF10005
5.0 W, 960 – 1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 336E–02, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
55
Vdc
Collector–Base Voltage
Emitter–Base Voltage
VCBO
55
Vdc
VEBO
3.5
Vdc
Collector Current — Continuous (1)
Total Device Dissipation @ TA = 25°C (1)
Derate above 25°C
IC
1.25
mAdc
PD
25
Watt
143
mW/°C
Storage Temperature Range
Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Tstg
– 65 to + 200
°C
TJ
200
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Case (2)
R_θJC
7.0
°C/W
NOTES:
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF10005
1