MMT10V275 Datasheet, PDF (2/4 Pages) Motorola, Inc – BIDIRECTIONAL THYRISTOR SURGE SUPPRESSORS 25 WATTS STEADY STATE

MMT10V275 MMT10V400
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristics
Breakover Voltage
(dv/dt = 100 V/µs, ISC = 10 A, Vdc = 1000 V)
MMT10V275
MMT10V400
Breakover Voltage
(f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms),
RI = 1.0 kΩ, t = 0.5 cycle, Note 2)
Breakover Voltage Temperature Coefficient
MMT10V275
MMT10V400
Breakdown Voltage
(I(BR) = 1.0 mA)
MMT10V275
MMT10V400
Breakdown Voltage Temperature Coefficient
Off State Current (VD = 160 V)
On–State Voltage (IT = 10 A)
(PW ≤ 300 µs, Duty Cycle ≤ 2%, Note 2)
Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kΩ)
Holding Current
Note 2
(10 x 100 Ms exponential wave, IT = 10 A, V = 52 V, RS = 200 Ω)
Critical Rate of Rise of Off–State Voltage
(Linear waveform, VD = 0.8 x Rated VDRM, TJ = 125°C)
Capacitance (f = 1.0 MHz, 50 V, 15 mV)
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
3. Requires θ_CS ≤ 6°C/W each side, infinite heatsink.
Symbol
V(BO)1
V(BO)2
dV(BO)/dTJ
V(BR)
dV(BO)/dTJ
ID
VT
IBO
IH
dv/dt
CO
Min
Typ
Max
Unit
Volts
—
—
275
—
—
400
Volts
—
—
275
—
—
400
—
0.05
—
%/°C
200
—
265
—
Volts
—
—
—
0.11
—
%/°C
—
—
3.0
µA
—
3.0
4.0
Volts
—
500
—
mA
—
400
—
mA
2000
—
—
V/µs
—
55
—
pF
R_θS(A1) R_θC(S1) R_θJ(C1)
TA
TS1
TC1
TJ
R_θJ(C2) R_θC(S2) R_θS(A2)
TC2
TS2
TA
PD
Terms in the model signify:
TA = Ambient Temp.
TS = Heatsink Temp.
TC = Case Temp.
TJ = Junction Temp.
R_θSA = Thermal Resistance, Heatsink to Ambient
R_θCS = Thermal Resistance, Case to Heatsink
R_θJC = Thermal Resistance, Junction to Case
PD = Power Dissipation
Subscripts 1 and 2 denote the device terminals, MT1 and MT2, respectively.
Thermal resistance values are:
R_θCS = 6°C/W maximum (each side)
R_θJC = 3°C/W maximum (each side)
The R_θCS values are estimates for dry mounting with heatsinks contacting the
raised pedestal on the package. For minimum thermal resistance, the device
should be sandwiched between clean, flat, smooth conducting electrodes and
securely held in place with a compressive force of 2 pounds maximum. The
electrodes should contact the entire pedestal area. When the device is
mounted symmetrically, the thermal resistances are identical. The values for
R_θSA and R_θCS are controlled by the user and depend on heatsink design and
mounting conditions.
Figure 1. Thermal Circuit, Device Mounted Between Heatsinks
2
Motorola Thyristor Device Data