English
Language : 

MMT10V275 Datasheet, PDF (1/4 Pages) Motorola, Inc – BIDIRECTIONAL THYRISTOR SURGE SUPPRESSORS 25 WATTS STEADY STATE
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
Thyristor Surge Suppressors
High Voltage Bidirectional TVS Devices
These transient voltage suppression (TVS) devices prevent overvoltage
damage to sensitive circuits by lightning, induction and power line crossings.
They are breakover–triggered crowbar protectors. Turn–off occurs when the
surge current falls below the holding current value.
Applications include current loop lines in telephony and control systems,
central office stations, repeaters, building and residence entrance terminals and
electronic telecom equipment.
• High Surge Current Capability
• Bidirectional Protection in a Single Device
• Little Change of Voltage Limit with Transient Amplitude or Rate
• Freedom from Wearout Mechanisms Present in Non–Semiconductor De-
vices
• Fail–Safe. Shorts When Overstressed, Preventing Continued Unprotected
Operation.
Order this document
by MMT10V275/D
MMT10V275*
MMT10V400*
*Motorola preferred devices
BIDIRECTIONAL
THYRISTOR SURGE
SUPPRESSORS
25 WATTS STEADY STATE
CASE 416A–01
DEVICE RATINGS:
– 40°C to 50°C for MMT10V275
– 40°C to 65°C for MMT10V400 (except surge)
Parameter
Peak Repetitive Off–State Voltage — Maximum
MMT10V275
MMT10V400
On–State Surge Current — Maximum Nonrepetitive (MMT10V400 – 20°C to 65°C)
10 x 1000 µs exponential wave, Notes 1, 2, 3
60 Hz ac, 1000 V(rms), RS = 1.0 kΩ, 1 second
60 Hz ac, 480 V(rms), RS = 48 Ω, 2 seconds
Rate of Change of On–State Current — Maximum Nonrepetitive
Critical Damped Wave, C = 1.2 µF, L = 16 µH, R = 7.4,
VCI = 1000 V, I(pk) = 100 A (short circuit), 0 to 50% I (pk)
DEVICE THERMAL RATINGS
Operating Temperature Range
Blocking or Conducting State
Overload Junction Temperature — Maximum
Conducting State Only
Thermal Resistance, Junction to Case — Maximum
Thermal Resistance, Case to Ambient, Without Heatsink
Symbol
VDM
ITSM1
ISTM2
ISTM3
di/dt
Value
± 200
± 265
± 100
± 10
± 1.0
50
Unit
Volts
A(pk)
A(rms)
A(rms)
A/µs
TJ1
TJ2
RθJC
—
– 40 to + 125
+ 175
1.5
+ 200
°C
°C
°C/W
°C/W
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
1
© Motorola, Inc. 1995