MMDF6N02HD Datasheet, PDF (2/10 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS

MMDF6N02HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0) (3)
V(BR)DSS
20
—
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk ≥ 2.0) (3)
IDSS
—
—
IGSS
—
VGS(th)
0.5
—
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 6.0 Adc)
(VGS = 2.5 Vdc, ID = 3.0 Adc)
(Cpk ≥ 2.0) (3)
RDS(on)
—
—
Forward Transconductance (VDS = 12 Vdc, ID = 3.0 Adc)
gFS
7.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
Coss
—
Crss
—
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 10 Vdc, ID = 3.5 Adc,
VGS = 4.0 Vdc,
RG = 10 Ω)
td(on)
—
tr
—
td(off)
—
tf
—
Gate Charge
See Figure 8
(VDS = 16 Vdc, ID = 6.0 Adc,
VGS = 4.0 Vdc)
QT
—
Q1
—
Q2
—
Q3
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 6.0 Adc, VGS = 0 Vdc)
VSD
—
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)
—
Reverse Recovery Time
trr
—
(IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
ta
—
tb
—
Reverse Recovery Stored Charge
QRR
—
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Max limit – Typ
Cpk = _{3 x SIGMA}
Typ
—
24.3
—
—
0.3
0.8
2.86
28
42
8.6
515
345
150
12
96
100
130
11
1.2
6.1
3.9
0.84
0.77
102
36
66
0.150
Max
Unit
Vdc
—
—
mV/°C
µAdc
2.5
25
100
nAdc
Vdc
1.2
—
mV/°C
mΩ
35
49
—
Mhos
572
pF
372
178
15
ns
103
108
140
12
nC
—
—
—
1.2
Vdc
—
—
ns
—
—
—
µC
2
Motorola TMOS Power MOSFET Transistor Device Data