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MMDF6N02HD Datasheet, PDF (1/10 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF6N02HD/D
⢠Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Dual N-Channel
Field Effect Transistors
Dual HDTMOS devices are an advanced series of power
MOSFETs which utilize Motorolaâs High Cell Density TMOS
process. These miniature surface mount MOSFETs feature low
RDS(on) and true logic level performance. Dual HDTMOS devices
are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applica-
tions are dcâdc converters, and power management in portable
and battery powered products such as computers, printers, cellular
and cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives.
⢠Low RDS(on) Provides Higher Efficiency and Extends Battery Life
⢠Logic Level Gate Drive â Can Be Driven by Logic ICs
G
⢠Miniature SOâ8 Surface Mount Package â Saves Board Space
⢠Diode Is Characterized for Use In Bridge Circuits
⢠Diode Exhibits High Speed, With Soft Recovery
⢠IDSS Specified at Elevated Temperature
⢠Mounting Information for SOâ8 Package Provided
MMDF6N02HD
Motorola Preferred Device
DUAL TMOS
POWER MOSFET
6.0 AMPERES
20 VOLTS
RDS(on) = 0.035 OHM
â¢
D
S
CASE 751â05, Style 11
SOâ8
Sourceâ1
Gateâ1
Sourceâ2
Gateâ2
18
27
36
45
Top View
Drainâ1
Drainâ1
Drainâ2
Drainâ2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
DrainâtoâSource Voltage
DrainâtoâGate Voltage (RGS = 1.0 Mâ¦)
GateâtoâSource Voltage â Continuous
Drain Current â Continuous @ TA = 25°C
Drain Current â Continuous @ TA = 70°C
Drain Current â Single Pulse (tp ⤠10 µs)
Total Power Dissipation @ TA = 25°C (1)
Operating and Storage Temperature Range
Thermal Resistance â Junction to Ambient
Maximum Lead Temperature for Soldering Purposes
DEVICE MARKING
D6N02H
(1) Mounted on 1â square FR4 or Gâ10 board (VGS = 4.5 V, @ 10 seconds).
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMDF6N02HDR2
13â³
12mm embossed tape
2500
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
RθJA
TL
Value
20
20
± 12
6.5
6.0
52
2.0
â 55 to 150
62.5
260
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
°C
°C/W
°C
Designerâs Data for âWorst Caseâ Conditions â The Designerâs Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves â representing boundaries on device characteristics â are given to facilitate âworst caseâ design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designerâs and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of
the Bergquist Company.
REV 1
©MMoottoororolal,aInTc.M19O9S7 Power MOSFET Transistor Device Data
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