MMDF5N02Z Datasheet, PDF (2/10 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS

MMDF5N02Z
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0)
(3)
V(BR)DSS
Vdc
20
—
—
—
15
—
mV/°C
Zero Gate Voltage Drain Current
(VDS = 12 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(Cpk ≥ 2.0)
(3)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
µAdc
—
—
0.5
—
—
15
—
—
150
—
—
1.5
µAdc
Vdc
0.5
0.78
1.1
—
3.0
—
mV/°C
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 5.0 Adc)
(VGS = 2.7 Vdc, ID = 2.5 Adc)
(Cpk ≥ 2.0)
(3)
RDS(on)
mΩ
—
34
40
—
44
50
Forward Transconductance (VDS = 9.0 Vdc, ID = 2.0 Adc)
gFS
3.0
5.6
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
—
450
630
pF
—
330
460
—
160
225
Turn–On Delay Time
td(on)
—
29
37
ns
Rise Time
Turn–Off Delay Time
(VDD = 6.0 Vdc, ID = 5.0 Adc,
VGS = 4.5 Vdc, RG = 6 Ω)
tr
td(off)
—
182
258
—
190
238
Fall Time
tf
—
225
274
Gate Charge
QT
—
10.7
12
nC
(VDS = 10 Vdc, ID = 5.0 Adc,
VGS = 4.5 Vdc)
Q1
—
1.1
—
Q2
—
5.4
—
Q3
—
3.5
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 5.0 Adc, VGS = 0 Vdc)
(IS = 5.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
Vdc
—
0.78
1.0
—
0.65
—
Reverse Recovery Time
(IS = 5.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Storage Charge
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Max limit – Typ
Cpk = _{3 x SIGMA}
trr
ta
tb
QRR
—
195
—
ns
—
72
—
—
123
—
—
0.5
—
µC
2
Motorola TMOS Power MOSFET Transistor Device Data