MMDF5N02Z Datasheet, PDF (1/10 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MMDF5N02Z/D
™ Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Dual N-Channel with
Monolithic Zener ESD
Protected Gate
EZFETs™ are an advanced series of power MOSFETs which
utilize Motorola’s High Cell Density HDTMOS process and contain
monolithic back–to–back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature low RDS(on) and true
logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important.
• Zener Protected Gates Provide Electrostatic Discharge Protection
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life _G
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
MMDF5N02Z
Motorola Preferred Device
DUAL TMOS
POWER MOSFET
5.0 AMPERES
20 VOLTS
RDS(on) = 0.040 OHM
™
D
CASE 751–05, Style 11
SO–8
S
Source1
Gate1
Source2
Gate2
18
27
36
45
Drain1
Drain1
Drain2
Drain2
Top View
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C (1)
Operating and Storage Temperature Range
Thermal Resistance — Junction to Ambient
Maximum Temperature for Soldering
(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 4.5 V, @ 10 Seconds)
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
R_θJA
TL
Value
20
20
± 12
5.0
4.5
40
2.0
– 55 to 150
62.5
260
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
°C
°C/W
°C
DEVICE MARKING
ORDERING INFORMATION
D5N02Z
Device
MMDF5N02ZR2
Reel Size
13″
Tape Width
12 mm embossed tape
Quantity
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s, HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trade-
mark of the Bergquist Company.
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