MMDF3N06HD Datasheet, PDF (2/10 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 60 VOLTS

MMDF3N06HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
Vdc
60
—
—
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0 Vdc)
(VDS = 48 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
µAdc
—
0.001
1.0
—
0.05
25
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IGSS
—
12
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.3 Adc)
(VGS = 4.5 Vdc, ID = 2.5 Adc)
VGS(th)
1.0
—
Vdc
—
RDS(on)
mW
—
67.5
100
—
82.5
200
Forward Transconductance
(VDS = 15 Vdc, ID = 1.5 Adc)
gFS
Mhos
—
7.5
—
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
—
442
618
pF
—
97.6
137
—
24.4
34.2
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 3.3 Adc,
VGS = 4.5 Vdc,
RG = 30 Ω)
td(on)
tr
td(off)
tf
—
10.6
22.1
ns
—
15.9
31.8
—
23.8
47.6
—
14.7
29.4
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 15 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
tr
td(off)
tf
—
7.0
14
ns
—
4.8
9.6
—
32.4
64.8
—
14.2
28.4
Gate Charge
(See Figure 8)
(VDS = 30 Vdc, ID = 3.3 Adc,
VGS = 10 Vdc)
QT
—
14.5
29
nC
Q1
—
1.8
—
Q2
—
3.5
—
Q3
—
3.75
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 1.7 Adc, VGS = 0 Vdc)
(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
Vdc
—
0.78
1.2
—
0.65
—
Reverse Recovery Time
(IS = 1.7 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
—
27.9
—
ns
ta
—
23
—
tb
—
4.9
—
Reverse Recovery Stored Charge
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
QRR
—
0.038
—
µC
2
Motorola TMOS Power MOSFET Transistor Device Data