MMDF3N06HD Datasheet, PDF (1/10 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 60 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF3N06HD/D
Advance Information
Medium Power Surface Mount Products
TMOS Dual N-Channel
Field Effect Transistors
Dual HDTMOS are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density TMOS process. These
miniature surface mount MOSFETs feature low RDS(on) and true
logic level performance. Dual HDTMOS devices are designed for
use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters,
and power management in portable and battery powered products
such as computers, printers, cellular and cordless phones. They
can also be used for low voltage motor controls in mass storage
D
products such as disk drives and tape drives.
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
G
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
D
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Source Current — Continuous @ TA = 25°C
Total Power Dissipation @ TA = 25°C (1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 60 Vdc, VGS = 5.0 Vdc, VDS = 32 Vdc, IL = 15 Apk, L = 10 mH, RG = 25 Ω)
Thermal Resistance — Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
DEVICE MARKING
D3N06
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMDF3N06HDR2
13″
12 mm embossed tape
2500 units
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
™
S
S
MMDF3N06HD
Motorola Preferred Device
DUAL TMOS
POWER MOSFET
60 VOLTS
RDS(on) = 100 mW
CASE 751–05, Style 11
SO–8
Source–1
Gate–1
Source–2
Gate–2
18
27
36
45
Top View
Drain–1
Drain–1
Drain–2
Drain–2
Symbol
VDSS
VGS
ID
IDM
IS
PD
TJ, Tstg
EAS
R_θJA
TL
Value
60
± 20
3.3
16.5
1.7
2.0
– 55 to 150
105
62.5
260
Unit
Vdc
Vdc
Adc
Apk
Adc
Watts
°C
mJ
°C/W
°C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
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