MMDF3N04HD Datasheet, PDF (2/10 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 3.4 AMPERES 40 VOLTS

MMDF3N04HD
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0)
(1) (3)
V(BR)DSS
Vdc
40
—
—
—
4.3
—
mV/°C
Zero Gate Voltage Drain Current
(VDS = 40 Vdc, VGS = 0 Vdc)
(VDS = 40 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk ≥ 2.0)
(1) (3)
IDSS
IGSS
VGS(th)
µAdc
—
0.015
2.5
—
0.15
10
—
0.013
500
nAdc
Vdc
1.0
2.0
3.0
—
4.9
—
mV/°C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.4 Adc)
(VGS = 4.5 Vdc, ID = 1.7 Adc)
(Cpk ≥ 2.0)
(1) (3)
RDS(on)
—
—
mΩ
55
80
79
100
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.7 Adc)
(1)
gFS
2.0
4.5
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
(VDS = 32 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
—
450
900
pF
—
130
230
—
32
96
Turn–On Delay Time
td(on)
—
9.0
18
ns
Rise Time
Turn–Off Delay Time
(VDD = 20 Vdc, ID = 3.4 Adc,
VGS = 10 Vdc, RG = 6 Ω) (1)
tr
td(off)
—
15
30
—
28
56
Fall Time
tf
—
19
38
Turn–On Delay Time
td(on)
—
13
26
ns
Rise Time
Turn–Off Delay Time
(VDD = 20 Vdc, ID = 1.7 Adc,
VGS = 4.5 Vdc, RG = 6 Ω) (1)
tr
td(off)
—
77
144
—
17
34
Fall Time
tf
—
20
40
Gate Charge
QT
—
13.9
28
nC
(VDS = 40 Vdc, ID = 3.4 Adc,
VGS = 10 Vdc) (1)
Q1
—
2.1
—
Q2
—
3.7
—
Q3
—
5.4
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 3.4 Adc, VGS = 0 Vdc) (1)
(IS = 3.4 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
Vdc
—
0.87
1.5
—
0.8
—
Reverse Recovery Time
(IS = 3.4 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (1)
Reverse Recovery Storage Charge
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Max limit – Typ
Cpk = _{3 x SIGMA}
(4) Repetitive rating; pulse width limited by maximum junction temperature.
trr
ta
tb
QRR
—
27
—
ns
—
20
—
—
7.0
—
—
0.03
—
µC
2
Motorola TMOS Power MOSFET Transistor Device Data