MMDF3N04HD Datasheet, PDF (1/10 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 3.4 AMPERES 40 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MMDF3N04HD/D
™ Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Dual N-Channel
Field Effect Transistor
MiniMOS™ devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process. These
miniature surface mount MOSFETs feature ultra low RDS(on) and true
logic level performance. They are capable of withstanding high energy
in the avalanche and commutation modes and the drain–to–source
diode has a very low reverse recovery time. MiniMOS devices are
designed for use in low voltage, high speed switching applications
where power efficiency is important. Typical applications are dc–dc
converters, and power management in portable and battery powered
products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives. The avalanche energy is
specified to eliminate the guesswork in designs where inductive loads
are switched and offer additional safety margin against unexpected
voltage transients.
G
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
• Avalanche Energy Specified
MMDF3N04HD
Motorola Preferred Device
DUAL TMOS
POWER MOSFET
3.4 AMPERES
40 VOLTS
RDS(on) = 0.080 OHM
™
D
CASE 751–05, Style 14
SO–8
S
Source–1
18
Drain–1
Gate–1 2 7 Drain–1
Source–2 3 6 Drain–2
Gate–2 4 5 Drain–2
Top View
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C (1)
Drain Current — Continuous @ TA = 70°C (1)
Drain Current — Pulsed Drain Current (4)
Total Power Dissipation @ TA = 25°C (1)
Linear Derating Factor (1)
VDSS
VDGR
VGS
ID
ID
IDM
PD
40
Vdc
40
Vdc
± 20
Vdc
3.4
Adc
3.0
40
Apk
2.0
Watts
16
mW/°C
Total Power Dissipation @ TA = 25°C (2)
Linear Derating Factor (2)
PD
1.39
Watts
11.11
mW/°C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 4.0 mH, VDS = 40 Vdc)
THERMAL RESISTANCE
TJ, Tstg – 55 to 150 °C
EAS
mJ
162
Rating
Symbol
Typ.
Max.
Unit
Thermal Resistance — Junction to Ambient, PCB Mount (1)
R_θJA
—
— Junction to Ambient, PCB Mount (2)
R_θJA
—
(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 10 V, @ 10 Seconds)
(2) When mounted on minimum recommended FR–4 or G–10 board (VGS = 10 V, @ Steady State)
DEVICE MARKING
ORDERING INFORMATION
62.5
°C/W
90
D3N04H
Device
MMDF3N04HDR2
Reel Size
13″
Tape Width
12 mm embossed tape
Quantity
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
HDTMOS, MiniMOS, and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Micro–8 is a registered trademark of International Rectifier. Thermal Clad is a trademark of the Berquist Company.
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