MMBTA63LT1 Datasheet, PDF (2/4 Pages) Motorola, Inc – Darlington Transistors

MMBTA63LT1 MMBTA64LT1
200
TA = 125°C
100
70
50
30
25°C
20
10
7.0
5.0
3.0
2.0
–0.3
–55°C
–0.5 –0.7 –1.0
–2.0 –3.0
–5.0 –7.0 –10
–20
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
VCE = –2.0 V
–5.0 V
–30
–50 –70 –100
–10 V
–200 –300
–2.0
TA = 25°C
–1.6
VBE(sat) @ IC/IB = 100
–1.2
VBE(on) @ VCE = –5.0 V
–0.8 VCE(sat) @ IC/IB = 1000
IC/IB = 100
–0.4
0
–0.3 –0.5 –1.0
–2 –3 –5 –10 –20 –30 –50 –100 –200 –300
IC, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltage
–2.0
TA = 25°C
–1.8
–1.6
IC = –10 mA –50 mA –100 mA –175 mA
–1.4
–300 mA
–1.2
–1.0
–0.8
–0.6
–0.1–0.2 –0.5 –1 –2 –5 –10 –20 –50 –100–200–500 –1K–2K –5K–10K
IB, BASE CURRENT (µA)
Figure 3. Collector Saturation Region
10
VCE = –5.0 V
4.0 ^{f = 100 MHz}
3.0 ^{TA = 25°C}
2.0
1.0
0.4
0.2
0.1
–1.0 –2.0
–5.0 –10 –20 –50 –100 –200
IC, COLLECTOR CURRENT (mA)
–500 –1K
Figure 4. High Frequency Current Gain
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data