MMBTA63LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – Darlington Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTA63LT1/D
Darlington Transistors
PNP Silicon
COLLECTOR 3
BASE
1
MMBTA63LT1
MMBTA64LT1*
*Motorola Preferred Device
EMITTER 2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
DEVICE MARKING
VCES
VCBO
VEBO
IC
–30
–30
–10
–500
Vdc
Vdc
Vdc
mAdc
MMBTA63LT1 = 2U; MMBTA64LT1 = 2V
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation FR–5 Board,(1)
PD
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
R_qJA
PD
Thermal Resistance, Junction to Ambient
R_qJA
Junction and Storage Temperature
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –100 µAdc)
Collector Cutoff Current (VCB = –30 Vdc)
Emitter Cutoff Current (VEB = –10 Vdc)
ON CHARACTERISTICS
DC Current Gain(3)
(IC = –10 mAdc, VCE = –5.0 Vdc)
(IC = –10 mAdc, VCE = –5.0 Vdc)
(IC = –100 mAdc, VCE = –5.0 Vdc)
(IC = –100 mAdc, VCE = –5.0 Vdc)
MMBTA63
MMBTA64
MMBTA63
MMBTA64
Collector – Emitter Saturation Voltage (IC = –100 mAdc, IB = –0.1 mAdc)
Base–Emitter On Voltage (IC = –100 mAdc, VCE = –5.0 Vdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
Min
Max
Unit
V(BR)CEO –30
ICBO
—
IEBO
—
—
–100
–100
hFE
5,000
—
10,000
—
10,000
—
20,000
—
VCE(sat)
—
–1.5
VBE(on)
—
–2.0
fT
125
—
Vdc
nAdc
nAdc
—
Vdc
Vdc
MHz
1