MMBT2222AWT1 Datasheet, PDF (2/4 Pages) Motorola, Inc – General Purpose Transistor

MMBT2222AWT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS(1)
DC Current Gain (1)
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
Collector – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALL– SIGNAL CHARACTERISTICS
HFE
35
50
75
100
40
VCE(sat)
—
—
VBE(sat)
0.6
—
Current – Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Small – Signal Current Gain
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Output Admittance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Noise Figure
(VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
fT
300
Cobo
—
Cibo
—
hie
0.25
hre
—
hfe
75
hoe
25
NF
—
Delay Time
Rise Time
(VCC = 3.0 Vdc, VBE = – 0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
v v 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
td
—
tr
—
ts
—
tf
—
Max
Unit
—
—
—
—
—
—
Vdc
0.3
1.0
Vdc
1.2
2.0
—
MHz
8.0
pF
30
pF
1.25
k ohms
4.0
X 10– ⁴
375
—
200
mmhos
4.0
dB
10
ns
25
225
ns
60
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data