MMBT2222AWT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – General Purpose Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MMBT2222AWT1/D
Preliminary Information
General Purpose Transistor
NPN Silicon
MMBT2222AWT1
Motorola Preferred Device
These transistors are designed for general purpose amplifier applica-
tions. They are housed in the SOT–323/SC–70 package which is
designed for low power surface mount applications.
COLLECTOR
3
1
BASE
3
1
2
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board
TA = 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT2222AWT1 = 1P
Symbol
VCEO
VCBO
VEBO
IC
Value
40
75
6.0
600
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
R_qJA
TJ, Tstg
Max
150
833
– 55 to +150
Unit
mW
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
v v 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
CASE 419 – 02, STYLE 3
SOT– 323/SC – 70
Min
Max
Unit
40
—
Vdc
75
—
Vdc
6.0
—
Vdc
—
20
nAdc
—
10
nAdc
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1997
Transistors,
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and
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Device
Data
1