MMBD1000LT1 Datasheet, PDF (2/8 Pages) Motorola, Inc – Switching Diode

MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 µA)
Reverse Voltage Leakage Current (VR = 75 V)
Forward Voltage (IF = 1.0 mA)
Forward Voltage (IF = 10 mA)
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
Reverse Recovery Time (IF = IR = 10 mA) (Figure 1)
Symbol
Min
Max
Unit
V(BR)
30
—
V
IR
—
500
pA
VF
—
850
mV
—
950
CD
—
2.0
pF
trr
—
3.0
µs
820 Ω
+10 V
2k
100 µH ^IF
0.1 µF
0.1 µF
tr
tp
t
IF
10%
trr
t
50 Ω OUTPUT
PULSE
GENERATOR
DUT
50 Ω INPUT
90%
SAMPLING
OSCILLOSCOPE
VR
INPUT SIGNAL
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data