MJE8503A Datasheet, PDF (2/4 Pages) Motorola, Inc – POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS - BVCES 80 WATTS

MJE8503A
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 1500 Vdc, VBE = 0, TC = 25°C)
(VCE = 1500 Vdc, VBE = 0, TC = 125°C)
Collector Cutoff Current
(VCE = 1500 Vdc, RBE = 50 Ohms, TC = 100°C)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
VCEO(sus)
700
ICES
—
—
ICER
—
IEBO
—
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 4.5 Adc, VCE = 5.0 Vdc)
Base-Emitter Saturation Voltage
(IC = 2.5 Adc, IB = 1.0 Vdc)
(IC = 4.5 Adc, IB = 2.0 Vdc)
Collector-Emitter Saturation Voltage
(IC = 2.5 Adc, IB = 1.0 Vdc)
(IC = 4.5 Adc, IB = 2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(IC = 0.1 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 0.1 MHz)
IS/b
hFE
7.5
2.25
VBE(sat)
—
—
VCE(sat)
—
—
fT
—
Cob
—
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
td
—
Rise Time
Storage Time
(IC = 2.5 Adc, IB = 1.0 Adc, VCC = 500 Vdc
tr
—
VBE(off) = 5.0 Vdc, tp = 50 µs)
ts
—
Fall Time
tf
—
Inductive Load (Table 1)
Storage Time
tsv
—
Crossover Time
(IC = 2.5 Adc, IB = 1.0 Adc, Vclamp = 500 Vdc
VBE(off) = 5.0 Vdc, tp = 50 µs)
tc
—
Fall Time
tfi
—
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2%
Typ
Max
Unit
—
—
Vdc
mAdc
—
0.1
—
2.0
—
5.0
mAdc
—
1.0
mAdc
See Figure 2
—
—
—
—
—
1.5
—
1.5
—
2.0
—
3.0
7.0
—
125
—
—
Vdc
Vdc
MHz
pF
0.06
0.2
µs
0.08
2.0
1.2
4.0
0.7
2.0
1.2
—
µs
0.45
—
0.18
—
2
Motorola Bipolar Power Transistor Device Data