MJE8503A Datasheet, PDF (1/4 Pages) Motorola, Inc – POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS - BVCES 80 WATTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MJE8503A/D
Advance Information
SWITCHMODE™ Series
NPN Bipolar Power Transistor
The MJE8503A transistor is designed for high voltage, high speed, power switching
in inductive circuits where fall time is critical. They are suited for line operated
switchmode applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Featuring
• 1500 Volt Collector-Base Breakdown Capability
• Fast Switching:
180 ns Typical Fall Times
450 ns Typical Crossover Times
1.2 µs Typical Storage Times
• Low Collector-Emitter Leakage Current — 100 µA Max @ 1500 VCES
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
Collector Current — Peak (1)
Collector Current — Continuous
Collector Current — Peak
Total Power Dissipation @ TC = 25°C
@ TC = 100°C
Derate above 25°C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering Purposes
1/8″ from Case for 5 sec.
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
Symbol
VCEO(sus)
VCES
VCBO
VEBO
IC
IB
IBM
PD
TJ, Tstg
Symbol
R_θJC
TL
MJE8503A*
*Motorola Preferred Device
POWER TRANSISTORS
5.0 AMPERES
1500 VOLTS — BVCES
80 WATTS
CASE 221A–06
TO–220AB
Value
700
1500
1500
5.0
5.0
10
4.0
4.0
80
21
0.8
– 65 to +125
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Max
Unit
1.25
°C/W
275
°C
SWITCHMODE is a trademark of Motorola Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
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